Group: Silanes

Hexamethyldisiloxane

Low-viscosity organosiloxane with good volatility, low surface tension and excellent thermal stability, chemically inert in most reactions.

Electronic Grade Silane

It is an ultra-high purity electronic special silicon source gas with purity up to 6~9N, strictly controlled trace metals, water and oxygen impurities, controllable thermal decomposition, uniform film formation and strong reducibility, compatible with full-range high-end semiconductor deposition processes including PECVD, LPCVD and ALD.

Electronic Grade Monochlorosilane

Electronic grade monochlorosilane special gas with ultra-high purity and low impurities. Molecules contain active Si-H bonds, enabling low-temperature decomposition film formation and excellent step coverage, suitable for low-temperature flexible deposition processes of advanced logic and memory chips.

Electronic Grade Dichlorosilane

6N+ high-purity dichlorosilane with ppb-level control of metal impurities, moderate decomposition temperature, stable silicon deposition rate, low film stress and excellent insulation performance, suitable for mass production lines of 12-inch large-size wafers.

Electronic Grade Trichlorosilane

Electronic grade trichlorosilane with ultra-high purity and extremely low impurities, high silicon deposition efficiency, compatible with high-temperature epitaxy processes, balanced thermal stability, and recyclable via closed-loop recovery, balancing mass production cost and film quality.

Electronic Grade Silicon Tetrachloride

Ultra-high purity liquid silicon tetrachloride with purity up to 9~10N, strictly controlled trace metal impurities, stable volatility and excellent low-temperature silicon deposition performance, meeting strict purification standards for both optical fiber and semiconductor industries.

Pentachlorodisilane

High-purity pentachlorodisilane containing Si-Si bonds and active hydrogen, with lower decomposition temperature than hexachlorodisilane, outstanding low-temperature film-forming capacity and superior conformal film coverage, suitable for ultra-low temperature ALD/CVD processes of next-generation advanced nodes.

Electronic Grade Hexachlorodisilane

Electronic grade hexachlorodisilane (HCDS) with disilicon molecular structure, significantly higher silicon deposition efficiency than monosilicon chlorosilanes at equivalent flow rates, low decomposition temperature, few by-products and dense pinhole-free films, suitable for mass production of sub-5nm advanced nodes.

Electronic Grade Bis (diethylamino) silane

Electronic grade bis (diethylamino) silane, chlorine-free high-purity silicon source with mild and easily removable amino ligands, low-temperature decomposition film formation, excellent film step coverage and no risk of chloride metal contamination, suitable for sensitive advanced device processes.

Electronic Grade Diisopropylaminosilane

It is chlorine-free electronic grade diisopropylaminosilane with ultra-high purity and ppb-level control of metal impurities. The amino ligands are mild and easy to remove, featuring excellent low-temperature thermal decomposition and superior film step coverage without chloride contamination risk, suitable for precise ALD film-forming systems of advanced chips.

Electronic Grade Diiodosilane

Electronic grade diiodosilane with ultra-high purity and low impurities. It features high activity of Si-I bonds, stable decomposition at low temperature, controllable silicon deposition rate and dense pinhole-free films. Iodine byproducts can be easily purged, compatible with ultra-low temperature ALD/CVD processes.

Electronic Grade Trisilylamine

Electronic grade high-purity silicon-nitrogen precursor trisilylamine, halogen-free with balanced activity of Si-N bonds. It can simultaneously supply silicon and nitrogen sources at low temperature to form uniform and dense silicon nitride films with ultra-low residual impurities, suitable for mass production of high-k and passivation layers.

Diethoxymethylsilane

High-purity organosilicon intermediate methyldiethoxysilane with high purity and low moisture impurities. Its hydrolysis reaction is mild and controllable to form flat films with methyl hydrophobicity, suitable for preparation systems of low-k organosilicon thin films.

(Z)-1-(trichlorosilyl)-4-chlorobut-2-ene

It is a cis-structured functional chlorosilane intermediate with high purity and strong reactivity. It contains both hydrolyzable trichlorosilyl group and terminal chlorobutenyl group, which can undergo various functional group transformations, serving as a key building block for special organosilicon synthesis.

Triphenylsilanol

Aromatic silanol, high thermal stability, stable structure, can be used as end-capping agent, crosslinking agent and synthetic intermediate.