Electronic Grade Silane
It is an ultra-high purity electronic special silicon source gas with purity up to 6~9N, strictly controlled trace metals, water and oxygen impurities, controllable thermal decomposition, uniform film formation and strong reducibility, compatible with full-range high-end semiconductor deposition processes including PECVD, LPCVD and ALD.
Electronic Grade Monochlorosilane
Electronic grade monochlorosilane special gas with ultra-high purity and low impurities. Molecules contain active Si-H bonds, enabling low-temperature decomposition film formation and excellent step coverage, suitable for low-temperature flexible deposition processes of advanced logic and memory chips.
Electronic Grade Dichlorosilane
6N+ high-purity dichlorosilane with ppb-level control of metal impurities, moderate decomposition temperature, stable silicon deposition rate, low film stress and excellent insulation performance, suitable for mass production lines of 12-inch large-size wafers.
Electronic Grade Trichlorosilane
Electronic grade trichlorosilane with ultra-high purity and extremely low impurities, high silicon deposition efficiency, compatible with high-temperature epitaxy processes, balanced thermal stability, and recyclable via closed-loop recovery, balancing mass production cost and film quality.
Electronic Grade Silicon Tetrachloride
Ultra-high purity liquid silicon tetrachloride with purity up to 9~10N, strictly controlled trace metal impurities, stable volatility and excellent low-temperature silicon deposition performance, meeting strict purification standards for both optical fiber and semiconductor industries.
Pentachlorodisilane
High-purity pentachlorodisilane containing Si-Si bonds and active hydrogen, with lower decomposition temperature than hexachlorodisilane, outstanding low-temperature film-forming capacity and superior conformal film coverage, suitable for ultra-low temperature ALD/CVD processes of next-generation advanced nodes.
Electronic Grade Hexachlorodisilane
Electronic grade hexachlorodisilane (HCDS) with disilicon molecular structure, significantly higher silicon deposition efficiency than monosilicon chlorosilanes at equivalent flow rates, low decomposition temperature, few by-products and dense pinhole-free films, suitable for mass production of sub-5nm advanced nodes.
Electronic Grade Bis (diethylamino) silane
Electronic grade bis (diethylamino) silane, chlorine-free high-purity silicon source with mild and easily removable amino ligands, low-temperature decomposition film formation, excellent film step coverage and no risk of chloride metal contamination, suitable for sensitive advanced device processes.
Electronic Grade Diisopropylaminosilane
It is chlorine-free electronic grade diisopropylaminosilane with ultra-high purity and ppb-level control of metal impurities. The amino ligands are mild and easy to remove, featuring excellent low-temperature thermal decomposition and superior film step coverage without chloride contamination risk, suitable for precise ALD film-forming systems of advanced chips.
Electronic Grade Diiodosilane
Electronic grade diiodosilane with ultra-high purity and low impurities. It features high activity of Si-I bonds, stable decomposition at low temperature, controllable silicon deposition rate and dense pinhole-free films. Iodine byproducts can be easily purged, compatible with ultra-low temperature ALD/CVD processes.
Electronic Grade Trisilylamine
Electronic grade high-purity silicon-nitrogen precursor trisilylamine, halogen-free with balanced activity of Si-N bonds. It can simultaneously supply silicon and nitrogen sources at low temperature to form uniform and dense silicon nitride films with ultra-low residual impurities, suitable for mass production of high-k and passivation layers.
Electronic Grade Titanium Tetrachloride
Ultra-high purity electronic grade titanium tetrachloride with metal impurities strictly controlled at ppb level, stable volatility and uniform thermal decomposition. The formed titanium dioxide/titanium nitride films have strong adhesion and stable deposition rate, suitable for CVD/ALD mass production lines of large-size wafers.
Electronic Grade Cyclopentadienyltris (dimethylamino) zirconium
Electronic grade cyclopentadienyltris(dimethylamino)zirconium, halogen-free high-purity zirconium source with mild ligand removal conditions, uniform film formation via low-temperature ALD. The formed zirconia films feature high dielectric constant and low leakage current, suitable for high-k gate dielectric preparation of advanced chips.
Electronic Grade Cyclopentadienyltris (dimethylamino) hafnium
Electronic grade cyclopentadienyltris(dimethylamino)hafnium, ultra-high purity chlorine-free hafnium precursor with moderate thermal stability and excellent conformal film formation via low-temperature decomposition. The hafnia films feature outstanding insulation and ultra-low residual impurities, suitable for mass production of high-k films in advanced processes.
Pentakis (dimethylamino) tantalum
Electronic grade high-purity tantalum precursor pentakis(dimethylamino)tantalum, halogen-free with easily thermally removable amino ligands. Dense and uniform tantalum oxide/tantalum nitride films can be deposited via low-temperature ALD with excellent dielectric performance and no residual metal ion contamination.
Brominated polystyrene-polybutadiene tri-block polymer
It is a polymer-type environmentally friendly brominated flame retardant with stable bromine content and high flame retardant efficiency. It has excellent compatibility with polystyrene substrates, anti-migration, precipitation resistance and good thermal stability, without affecting the mechanical properties of materials, suitable for flame retardant modification formulations.
B-TRICHLOROBORAZINE
It is a boron-nitrogen compound with benzene-like ring structure, high reactivity and high purity. It is a precise molecular precursor for boron nitride materials, and the synthesized boron nitride ceramics have excellent high temperature resistance, electrical insulation and mechanical strength.
3-(4-Aminophenyl)-1,1,3-trimethyl-5-indanamine
It is an indane-based aromatic diamine monomer with high rigidity, good heat resistance and good solubility.
Lithium Difluoro(oxalato)borate
Novel lithium salt for lithium batteries with wide electrochemical window and excellent high-temperature stability. It optimizes the interfacial film of electrolyte, inhibits electrolyte decomposition, has weak corrosion to aluminum current collectors and long cycle life, suitable for high-voltage energy storage battery systems.
C60
Zero-dimensional nanocarbon material with a typical football cage molecular structure. It has high electron affinity, strong antioxidant capacity, excellent thermal & chemical stability and unique photoelectric properties.